当连接64 FMC IS42S16400J-7BLI时,我与FMC控制器有问题。我正在使用CubeMX设置基本配置
static void MX_FMC_Init(void)
{
FMC_SDRAM_TimingTypeDef SdramTiming;
/** Perform the SDRAM1 memory initialization sequence
*/
hsdram1.Instance = FMC_SDRAM_DEVICE;
/* hsdram1.Init */
hsdram1.Init.SDBank = FMC_SDRAM_BANK1;
hsdram1.Init.ColumnBitsNumber = FMC_SDRAM_COLUMN_BITS_NUM_11;
hsdram1.Init.RowBitsNumber = FMC_SDRAM_ROW_BITS_NUM_12;
hsdram1.Init.MemoryDataWidth = FMC_SDRAM_MEM_BUS_WIDTH_16;
hsdram1.Init.InternalBankNumber = FMC_SDRAM_INTERN_BANKS_NUM_4;
hsdram1.Init.CASLatency = FMC_SDRAM_CAS_LATENCY_3;
hsdram1.Init.WriteProtection = FMC_SDRAM_WRITE_PROTECTION_DISABLE;
hsdram1.Init.SDClockPeriod = FMC_SDRAM_CLOCK_PERIOD_2;
hsdram1.Init.ReadBurst = FMC_SDRAM_RBURST_DISABLE;
hsdram1.Init.ReadPipeDelay = FMC_SDRAM_RPIPE_DELAY_0;
/* SdramTiming */
SdramTiming.LoadToActiveDelay = 2;
SdramTiming.ExitSelfRefreshDelay = 7;
SdramTiming.SelfRefreshTime = 4;
SdramTiming.RowCycleDelay = 7;
SdramTiming.WriteRecoveryTime = 3;
SdramTiming.RPDelay = 2;
SdramTiming.RCDDelay = 2;
if (HAL_SDRAM_Init(&hsdram1, &SdramTiming) != HAL_OK)
{
Error_Handler();
}
}并配置内存
void SDRAM_Initialization_Sequence(SDRAM_HandleTypeDef* hsdram, FMC_SDRAM_CommandTypeDef* Command)
{
__IO uint32_t tmpmrd = 0;
/* Step 3: Configure a clock configuration enable command */
Command->CommandMode = FMC_SDRAM_CMD_CLK_ENABLE;
Command->CommandTarget = FMC_SDRAM_CMD_TARGET_BANK1;
Command->AutoRefreshNumber = 1;
Command->ModeRegisterDefinition = 0;
/* Send the command */
HAL_SDRAM_SendCommand(hsdram, Command, 0x1000);
/* Step 4: Insert 100 ms delay */
HAL_Delay(100);
/* Step 5: Configure a PALL (precharge all) command */
Command->CommandMode = FMC_SDRAM_CMD_PALL;
Command->CommandTarget = FMC_SDRAM_CMD_TARGET_BANK1;
Command->AutoRefreshNumber = 1;
Command->ModeRegisterDefinition = 0;
/* Send the command */
HAL_SDRAM_SendCommand(hsdram, Command, 0x1000);
/* Step 6 : Configure a Auto-Refresh command */
Command->CommandMode = FMC_SDRAM_CMD_AUTOREFRESH_MODE;
Command->CommandTarget = FMC_SDRAM_CMD_TARGET_BANK1;
Command->AutoRefreshNumber = 4;
Command->ModeRegisterDefinition = 0;
/* Send the command */
HAL_SDRAM_SendCommand(hsdram, Command, 0x1000);
/* Step 7: Program the external memory mode register */
tmpmrd = (uint32_t)SDRAM_MODEREG_BURST_LENGTH_2 |
SDRAM_MODEREG_BURST_TYPE_SEQUENTIAL |
SDRAM_MODEREG_CAS_LATENCY_3 |
SDRAM_MODEREG_OPERATING_MODE_STANDARD |
SDRAM_MODEREG_WRITEBURST_MODE_SINGLE;
Command->CommandMode = FMC_SDRAM_CMD_LOAD_MODE;
Command->CommandTarget = FMC_SDRAM_CMD_TARGET_BANK1;
Command->AutoRefreshNumber = 1;
Command->ModeRegisterDefinition = tmpmrd;
/* Send the command */
HAL_SDRAM_SendCommand(hsdram, Command, 0x1000);
/* Step 8: Set the refresh rate counter */
/* (15.62 us x Freq) - 20 */
/* Set the device refresh counter */
HAL_SDRAM_ProgramRefreshRate(hsdram, REFRESH_COUNT);
}存储器和微电路按照原理图连接。

我只能用8位寻址。在这种配置中,一切都是完美的,即我可以在调试窗口中读取/写入值并观察它们。不过,它限制了我的内存容量只有8MB。
当我在9/10/11位以下的设置中修改8位以获得更多可用内存时,它就会启动故障,即某些内存区域中的垃圾。

我做了定制板,但同样的问题,你会发现在STM32F429-迪斯科板。所以我拒绝这种联系。我试着玩“从行到列的延迟”这样的时间延迟,并增加所有可能的延迟,但不是运气。任何帮助都将不胜感激。
发布于 2018-01-20 09:12:01
来自IS42S16400J-7BLI数据表:
内部配置为具有同步接口的四行DRAM。每个16,777,216位银行被组织为4,096行,由256列和16位组成.
因此,您应该在ColumnBitsNumber中使用8位。您将得到8兆字节(64 MBits/8)的内存。
https://stackoverflow.com/questions/46907765
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